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IBM and its development partners have announced a new material known as ‘high-k/metal gate’ or HKMG, which is less prone to power leakage problems than traditional manufacturing techniques.
The company has used the new material on 32nm technology evaluation circuits, significantly enhancing performance by 30%, compared with 45nm circuits operating at the same voltage, and reducing power consumption by between 30% and 50%.
IBM developed the technology in partnership with major industry players, including Chartered Semiconductor Manufacturing Ltd, Freescale Inc., Infineon Technologies AG, Samsung Electronics Co., Ltd, STMicroelectronics N.V. and Toshiba Corporation.
According to IBM, silicon support for the 32nm HKMG technology will be available from Q3 2008, via a quarterly prototype program, making it possible for OEMs to begin working on the first generation of chips built from the process
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